http://www.ncepower.com
NCEAP25N10AK
NCE Automotive N-Channel Super Trench II Power MOSFET
Description
General Features
The NCEAP25N10AK uses Super Trench II technology that is ● VDS =100V,ID =37A
uniquely optimized to provide the most efficient high frequency
switching performance. Both conduction and switching power
RDS(ON)=21mΩ (typical) @ VGS=10V
RDS(ON)=26mΩ (typical) @ VGS=4.5V
losses are minimized due to an extremely low combination of ● Excellent gate charge x RDS(on) product(FOM)
RDS(ON) and Qg. This device is ideal for high-frequency switching ● Very low on-resistance RDS(on)
and synchronous rectification.
● 175 °C operating temperature
● Pb-free lead plating
● 100% UIS tested
Application
● Automotive application
● DC/DC Converter
● 100% ΔVds tested
● Ideal for high-frequency switching and synchronous rectification
● AEC-Q101 qualified
TO-252-2L
Schematic Diagram
Top View
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
AP25N10AK
NCEAP25N10AK
TO-252-2L
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
VDS
Limit
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
100
±20
V
VGS
37
A
A
ID
ID (100℃)
IDM
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
26.8
148
A
Maximum Power Dissipation
70
W
PD
Derating factor
0.47
97
W/℃
mJ
℃
Single pulse avalanche energy (Note 1)
Operating Junction and Storage Temperature Range
EAS
-55 To 175
TJ,TSTG
Wuxi NCE Power Co., Ltd
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