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NCEAP026N10T
NCE Automotive N-Channel Super Trench II Power MOSFET
Description
The NCEAP026N10T uses Super Trench II technology that is
General Features
● VDS =100V,ID =245A (Silicon Limited)
uniquely optimized to provide the most efficient high frequency
RDS(ON)=2.15mΩ , typical@ VGS=10V
switching performance. Both conduction and switching power
● Excellent gate charge x RDS(on) product(FOM)
losses are minimized due to an extremely low combination of
● Very low on-resistance RDS(on)
RDS(ON) and Qg. This device is ideal for high-frequency switching
● 175 °C operating temperature
and synchronous rectification.
● Pb-free lead plating
Application
● 100% UIS tested
●Automotive application
● 100% ΔVds tested
●DC/DC Converter
● AEC-Q101 qualified
●Ideal for high-frequency switching and synchronous rectification
TO-247-3L
Schematic Diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
AP026N10T
NCEAP026N10T
TO-247-3L
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
VDS
Limit
100
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
V
V
±20
VGS
245
172
920
300
2
A
ID
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
ID (100℃)
IDM
A
A
Maximum Power Dissipation
W
PD
Derating factor
W/℃
mJ
℃
Single pulse avalanche energy (Note 1)
Operating Junction and Storage Temperature Range
EAS
2300
-55 To 175
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Case
RθJC
0.5
℃/W
Wuxi NCE Power Co., Ltd
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