NCEAP020N10LL
http://www.ncepower.com
NCE Automotive N-Channel Super Trench II Power MOSFET
Description
General Features
The series of devices uses Super Trench II technology that is
● VDS =100V,ID =330A
uniquely optimized to provide the most efficient high frequency
RDS(ON)=1.5mΩ , typical @ VGS=10V
switching performance. Both conduction and switching power
● Excellent gate charge x RDS(on) product(FOM)
losses are minimized due to an extremely low combination of
● Very low on-resistance RDS(on)
RDS(ON) and Qg. This device is ideal for high-frequency switching
● 175 °C operating temperature
and synchronous rectification.
● Pb-free lead plating
Application
● 100% UIS tested
● Automotive application
● 100% ΔVds tested
● DC/DC Converter
● AEC-Q101 qualified
● Ideal for high-frequency switching and synchronous rectification
TOLL-8L
Schematic Diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
AP020N10LL
NCEAP020N10LL
TOLL-8L
Ø330mm
24mm
2000 units
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
100
±20
V
V
VDS
VGS
330
A
ID
ID (TC=100℃)
IDM
Drain Current-Continuous
Pulsed Drain Current(Note 1)
240
A
1320
400
A
Maximum Power Dissipation
W
PD
Derating factor
2.67
W/℃
mJ
℃
Single pulse avalanche energy (Note 4)
Operating Junction and Storage Temperature Range
EAS
2975
-55 To 175
TJ,TSTG
Thermal Characteristic
Parameter
Typ
Max
0.38
Symbol
Unit
Thermal Resistance,Junction-to-Case
RθJC
0.2
℃/W
Wuxi NCE Power Co., Ltd
Page1
V2.0
http://www.ncepower.com