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NCEA6042AG PDF预览

NCEA6042AG

更新时间: 2024-11-26 15:19:43
品牌 Logo 应用领域
新洁能 - NCEPOWER 双极性晶体管
页数 文件大小 规格书
6页 326K
描述
新洁能提供质量可靠、品种齐全、性能卓越的车规级功率器件,包含N型MOSFET,P型MOSFET,双通道MOSFET,IGBT,上述车规级功率器件均已通过AEC-Q101认证。其中,车规级功率MOS

NCEA6042AG 数据手册

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http://www.ncepower.com  
NCEA6042AG  
NCE Automotive N-Channel Enhancement Mode Power MOSFET  
General Features  
● VDS =60V,ID =42A  
Description  
RDS(ON) <14mΩ @ VGS=10V  
The NCEA6042AG uses advanced trench technology and  
RDS(ON) <19mΩ @ VGS=4.5V  
design to provide excellent RDS(ON) with low gate charge. It  
● High density cell design for ultra low Rdson  
can be used in a wide variety of applications.  
● Fully characterized avalanche voltage and current  
● Excellent package for good heat dissipation  
Application  
● Special process technology for high ESD capability  
● Automotive application  
● 175 °C operating temperature  
● Power switching application  
● Pb-free lead plating  
● Hard switched and high frequency circuits  
● 100% UIS tested  
● Uninterruptible power supply  
● 100% ΔVds tested  
AEC-Q101 qualified  
DFN 5X6  
Top View  
Schematic Diagram  
Bottom View  
Package Marking and Ordering Information  
Device Marking  
Device  
Device Package  
Reel Size  
Tape width  
Quantity  
A6042AG  
NCEA6042AG  
DFN5X6-8L  
-
-
-
Absolute Maximum Ratings (TC=25unless otherwise noted)  
Parameter Symbol  
Limit  
60  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
VGS  
±20  
V
42  
29.5  
A
A
ID  
Drain Current-Continuous  
Pulsed Drain Current (Note 1)  
ID (100)  
IDM  
168  
A
Maximum Power Dissipation  
53  
W
PD  
Derating factor  
0.35  
W/℃  
mJ  
Single pulse avalanche energy (Note 5)  
Operating Junction and Storage Temperature Range  
EAS  
160  
-55 To 175  
TJ,TSTG  
Wuxi NCE Power Co., Ltd  
Page 1  
V1.0  

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