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NCE7190A PDF预览

NCE7190A

更新时间: 2024-11-19 17:00:59
品牌 Logo 应用领域
新洁能 - NCEPOWER 开关
页数 文件大小 规格书
7页 609K
描述
新洁能提供的N型12V~200V和P型12V~150V沟槽型(Trench)功率MOSFET产品,采用先进的工艺制造技术、更优的工艺条件、精细优化的器件结构不断优化产品导通电阻、开关特性、可靠性等

NCE7190A 数据手册

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NCE7190A  
http://www.ncepower.com  
NCE N-Channel Enhancement Mode Power MOSFET  
Description  
The NCE7190A uses advanced trench technology and design  
to provide excellent RDS(ON) with low gate charge. This device is  
suitable for use in PWM, load switching and general purpose  
applications.  
General Features  
VDS =71V,ID =100A  
Schematic diagram  
RDS(ON) < 5.2 mΩ @ VGS=10V (Typ:4.5mΩ)  
High density cell design for ultra low Rdson  
Fully characterized avalanche voltage and current  
Special designed for convertors and power controls  
Good stability and uniformity with high EAS  
Excellent package for good heat dissipation  
Special process technology for high ESD capability  
Marking and pin assignment  
Application  
Power switching application  
Hard switched and High frequency circuits  
Uninterruptible power supply  
100% UIS TESTED!  
100% ΔVds TESTED!  
TO-220-3L top view  
Package Marking and Ordering Information  
Device Marking  
Device  
Device Package  
Reel Size  
Tape width  
Quantity  
NCE7190A  
NCE7190A  
TO-220-3L  
-
-
-
Absolute Maximum Ratings (TA=25unless otherwise noted)  
Parameter  
Symbol  
VDS  
Limit  
71  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current-Continuous  
V
V
±20  
VGS  
100  
70.7  
A
ID  
Drain Current-Continuous(TC=100)  
Pulsed Drain Current  
ID (100)  
IDM  
A
400  
A
Maximum Power Dissipation  
170  
W
PD  
Derating factor  
1.13  
W/℃  
mJ  
Single pulse avalanche energy (Note 5)  
Operating Junction and Storage Temperature Range  
EAS  
812  
-55 To 175  
TJ,TSTG  
Wuxi NCE Power Co., Ltd  
Page 1  
V5.0  

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