NCE7190A
http://www.ncepower.com
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE7190A uses advanced trench technology and design
to provide excellent RDS(ON) with low gate charge. This device is
suitable for use in PWM, load switching and general purpose
applications.
General Features
● VDS =71V,ID =100A
Schematic diagram
RDS(ON) < 5.2 mΩ @ VGS=10V (Typ:4.5mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Special designed for convertors and power controls
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Marking and pin assignment
Application
● Power switching application
● Hard switched and High frequency circuits
● Uninterruptible power supply
100% UIS TESTED!
100% ΔVds TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
NCE7190A
NCE7190A
TO-220-3L
-
-
-
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
VDS
Limit
71
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
V
V
±20
VGS
100
70.7
A
ID
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
ID (100℃)
IDM
A
400
A
Maximum Power Dissipation
170
W
PD
Derating factor
1.13
W/℃
mJ
℃
Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature Range
EAS
812
-55 To 175
TJ,TSTG
Wuxi NCE Power Co., Ltd
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V5.0