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NCE70N900F PDF预览

NCE70N900F

更新时间: 2024-04-09 19:02:02
品牌 Logo 应用领域
新洁能 - NCEPOWER /
页数 文件大小 规格书
7页 813K
描述
新洁能提供击穿电压等级范围为500V至1050V的N沟道SJ-IV系列功率MOSFET产品。采用第四代技术超结技术的产品,具有优异的性能,实现了业界先进的超低特征导通电阻(Ron,sp),在相同体

NCE70N900F 数据手册

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NCE70N900F  
N-Channel Super Junction Power MOSFET   
General Description  
The series of devices use advanced trench gate super  
junction technology and design to provide excellent RDS(ON)  
with low gate charge. This super junction MOSFET fits the  
industry’s AC-DC SMPS requirements for PFC, AC/DC  
power conversion, and industrial power applications.  
VDS min@Tjmax  
750  
820  
5
V
mΩ  
A
RDS(ON)TYP.  
ID  
Qg  
9.7  
nC  
Features  
Optimized body diode reverse recovery performance  
Low on-resistance and low conduction losses  
Small package  
Ultra Low Gate Charge cause lower driving requirements  
100% Avalanche Tested  
ROHS compliant  
Application  
Power factor correctionPFC)  
Switched mode power supplies(SMPS)  
Uninterruptible Power SupplyUPS)  
LLC Half-bridge  
Package Marking And Ordering Information  
Device  
Device Package  
Marking  
NCE70N900F  
TO-220F-3L  
NCE70N900F  
Table 1. Absolute Maximum Ratings (TC=25)  
Parameter  
Symbol  
Value  
700  
Unit  
V
Drain-Source Voltage (VGS=0V)  
VDS  
VGS  
±30  
±20  
5
V
Gate-Source Voltage (VDS=0V) ,AC (f>1 Hz)  
Gate-Source Voltage (VDS=0V) ,DC  
Continuous Drain Current at Tc=25°C  
Continuous Drain Current at Tc=100°C  
V
VGS  
A
ID (DC)  
ID (DC)  
IDM (pluse)  
PD  
3.5  
A
(Note 1)  
15  
A
Pulsed drain current  
Maximum Power Dissipation(Tc=25)  
30.8  
0.21  
1.1  
W
Derate above 25°C  
W/°C  
A
(Note 2)  
IAS  
Single pulse avalanche current  
15  
Reverse diode dv/dtVDS 480 V,ISD<ID  
Drain Source voltage slopeVDS 480 V  
Operating Junction and Storage Temperature Range  
dv/dt  
dv/dt  
TJ,TSTG  
V/ns  
V/ns  
°C  
50  
-55...+175  
Wuxi NCE Power Co., Ltd  
Page 1  
http://www.ncepower.com  
V1.0  

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