Datasheet > NCE70N600K

NCE70N600K

更新时间： 2024-11-21 17:01:15

品牌	Logo	应用领域
新洁能 - NCEPOWER		/
页数	文件大小	规格书
7页	789K
描述
新洁能提供击穿电压等级范围为500V至1050V的N沟道SJ-IV系列功率MOSFET产品。采用第四代技术超结技术的产品，具有优异的性能，实现了业界先进的超低特征导通电阻（Ron,sp），在相同体

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NCE70N600K 数据手册

NCE70N600K

N-Channel Super Junction Power MOSFET Ⅳ

General Description

The series of devices use advanced trench gate super

junction technology and design to provide excellent RDS(ON)

with low gate charge. This super junction MOSFET fits the

industry’s AC-DC SMPS requirements for PFC, AC/DC

power conversion, and industrial power applications.

V_{DS min@Tjmax}

750

540

mΩ

R_DS(ON)TYP.

I_D

9.2

Features

●Optimized body diode reverse recovery performance

●Low on-resistance and low conduction losses

●Small package

●Ultra Low Gate Charge cause lower driving requirements

●100% Avalanche Tested

●ROHS compliant

Application

●

Power factor correction（PFC）

Switched mode power supplies(SMPS)

Uninterruptible Power Supply（UPS）

LLC Half-bridge

Schematic diagram

Package Marking And Ordering Information

Device

Device Package

Marking

NCE70N600K

TO-252-2L

NCE70N600K

Table 1. Absolute Maximum Ratings (T_C=25℃)

Parameter

Symbol

VDS

Value

700

Unit

Drain-Source Voltage (VGS=0V）

±30

±20

Gate-Source Voltage (VDS=0V) ,AC (f>1 Hz)

Gate-Source Voltage (VDS=0V) ,DC

Continuous Drain Current at Tc=25°C

Continuous Drain Current at Tc=100°C

VGS

I_{D (DC)}

I_{DM (pluse)}

P_D

4.9

(Note 1)

Pulsed drain current

Maximum Power Dissipation(Tc=25℃)

Derate above 25°C

0.62

1.3

W/°C

(Note 2)

I_AS

Single pulse avalanche current

Reverse diode dv/dt，V_DS≤480 V,I_SD<I_D

Drain Source voltage slope，V_DS≤480 V

Operating Junction and Storage Temperature Range

dv/dt

T_J,T_STG

V/ns

°C

-55...+175

Wuxi NCE Power Co., Ltd

Page 1

http://www.ncepower.com

V1.0

12 3 4 5 6 7

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