Datasheet > NCE65TF180T

NCE65TF180T

更新时间： 2024-04-09 19:00:43

品牌	Logo	应用领域
新洁能 - NCEPOWER		开关
页数	文件大小	规格书
9页	1449K
描述
新洁能提供击穿电压等级范围为600V至650V的N沟道SJ-IIITF系列功率MOSFET产品。为了满足全桥、半桥、LLC谐振开关应用中效率及EMI需求，基于新洁能在SJ-III技术基础上，在保证

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NCE65TF180T 数据手册

NCE65TF180T

N-Channel Super Junction Power MOSFET Ⅲ

General Description

The series of devices use advanced trench gate super

junction technology and design to provide excellent RDS(ON)

with low gate charge. This super junction MOSFET fits the

industry’s AC-DC SMPS requirements for PFC, AC/DC

power conversion, and industrial power applications.

V_DS

650

160

mΩ

R_DS(ON)

I_D

Features

●Optimized body diode reverse recovery performance

●Low on-resistance and low conduction losses

●Small package

●Ultra Low Gate Charge cause lower driving requirements

●100% Avalanche Tested

●ROHS compliant

Schematic diagram

Application

●

Power factor correction（PFC）

Switched mode power supplies(SMPS)

Uninterruptible Power Supply（UPS）

LLC Half-bridge

 Intrinsic fast-recovery body diode

Package Marking And Ordering Information

Device

Device Package

Marking

NCE65TF180T

TO-247

Table 1. Absolute Maximum Ratings (T_C=25℃)

Parameter

Symbol

VDS

Value

Unit

650

±30

±20

Drain-Source Voltage (VGS=0V）

Gate-Source Voltage (VDS=0V), AC (f>1 Hz)

Gate-Source Voltage (VDS=0V),DC

Continuous Drain Current at T_C=25°C

Continuous Drain Current at T_C=100°C

VGS

I_{D (DC)}

I_{DM (pluse)}

P_D

13.2

(Note 1)

Pulsed drain current

Maximum Power Dissipation(T_C=25℃)

188

1.5

Derate above 25°C

W/°C

(Note 2)

441

10.5

E^AS

I_AR

Single pulse avalanche energy

Avalanche current^{(Note 1)}

Repetitive Avalanche energy ，t_ARlimited by T_Jmax

(Note 1)

0.7

E_AR

Wuxi NCE Power Co., Ltd

Page

http://www.ncepower.com

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