NCE65TF180D,NCE65TF180,NCE65TF180F
N-Channel Super Junction Power MOSFET Ⅲ
General Description
The series of devices use advanced trench gate super
junction technology and design to provide excellent RDS(ON)
with low gate charge. This super junction MOSFET fits the
industry’s AC-DC SMPS requirements for PFC, AC/DC
power conversion, and industrial power applications.
VDS
650
180
21
V
mΩ
A
RDS(ON) MAX
ID
Features
●Optimized body diode reverse recovery performance
●Low on-resistance and low conduction losses
●Small package
●Ultra Low Gate Charge cause lower driving requirements
●100% Avalanche Tested
●ROHS compliant
Application
● Power factor correction(PFC)
● Switched mode power supplies(SMPS)
● Uninterruptible Power Supply(UPS)
● LLC Half-bridge
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
TO-220
Marking
NCE65TF180
NCE65TF180F
NCE65TF180D
NCE65TF180
NCE65TF180F
NCE65TF180D
TO-220F
TO-263
TO-263
TO-220
TO-220F
Table 1. Absolute Maximum Ratings (TC=25℃)
NCE65TF180
Parameter
Symbol
NCE65TF180F
Unit
NCE65TF180D
650
V
V
Drain-Source Voltage (VGS=0V)
VDS
VGS
±30
Gate-Source Voltage (VDS=0V), AC (f>1 Hz)
Continuous Drain Current at TC=25°C
Continuous Drain Current at TC=100°C
21
13.2
84
21*
13.2*
84*
A
ID (DC)
ID (DC)
IDM (pluse)
PD
A
(Note 1)
A
Pulsed drain current
Maximum Power Dissipation(TC=25℃)
188
1.5
33.8
0.27
W
Derate above 25°C
W/°C
mJ
A
(Note 2)
441
EAS
IAR
Single pulse avalanche energy
(Note 1)
10.5
Avalanche current
Repetitive Avalanche energy ,tAR limited by TJmax
(Note 1)
0.7
EAR
mJ
Wuxi NCE Power Co., Ltd
Page
http://www.ncepower.com
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