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NCE65TF180D PDF预览

NCE65TF180D

更新时间: 2024-11-19 15:19:11
品牌 Logo 应用领域
新洁能 - NCEPOWER 开关
页数 文件大小 规格书
10页 620K
描述
新洁能提供击穿电压等级范围为600V至650V的N沟道SJ-IIITF系列功率MOSFET产品。为了满足全桥、半桥、LLC谐振开关应用中效率及EMI需求,基于新洁能在SJ-III技术基础上,在保证

NCE65TF180D 数据手册

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NCE65TF180D,NCE65TF180,NCE65TF180F  
N-Channel Super Junction Power MOSFET   
General Description  
The series of devices use advanced trench gate super  
junction technology and design to provide excellent RDS(ON)  
with low gate charge. This super junction MOSFET fits the  
industry’s AC-DC SMPS requirements for PFC, AC/DC  
power conversion, and industrial power applications.  
VDS  
650  
180  
21  
V
mΩ  
A
RDS(ON) MAX  
ID  
Features  
Optimized body diode reverse recovery performance  
Low on-resistance and low conduction losses  
Small package  
Ultra Low Gate Charge cause lower driving requirements  
100% Avalanche Tested  
ROHS compliant  
Application  
Power factor correctionPFC)  
Switched mode power supplies(SMPS)  
Uninterruptible Power SupplyUPS)  
LLC Half-bridge  
Schematic diagram  
Package Marking And Ordering Information  
Device  
Device Package  
TO-220  
Marking  
NCE65TF180  
NCE65TF180F  
NCE65TF180D  
NCE65TF180  
NCE65TF180F  
NCE65TF180D  
TO-220F  
TO-263  
TO-263  
TO-220  
TO-220F  
Table 1. Absolute Maximum Ratings (TC=25)  
NCE65TF180  
Parameter  
Symbol  
NCE65TF180F  
Unit  
NCE65TF180D  
650  
V
V
Drain-Source Voltage (VGS=0V)  
VDS  
VGS  
±30  
Gate-Source Voltage (VDS=0V), AC (f>1 Hz)  
Continuous Drain Current at TC=25°C  
Continuous Drain Current at TC=100°C  
21  
13.2  
84  
21*  
13.2*  
84*  
A
ID (DC)  
ID (DC)  
IDM (pluse)  
PD  
A
(Note 1)  
A
Pulsed drain current  
Maximum Power Dissipation(TC=25)  
188  
1.5  
33.8  
0.27  
W
Derate above 25°C  
W/°C  
mJ  
A
(Note 2)  
441  
EAS  
IAR  
Single pulse avalanche energy  
(Note 1)  
10.5  
Avalanche current  
Repetitive Avalanche energy tAR limited by TJmax  
(Note 1)  
0.7  
EAR  
mJ  
Wuxi NCE Power Co., Ltd  
Page  
http://www.ncepower.com  
1.0  
1

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