NCE65R360D,NCE65R360,NCE65R360F
N-Channel Super Junction Power MOSFET Ⅱ
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low
gate charge. This super junction MOSFET fits the industry’s
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
VDS
650
360
11
V
mΩ
A
RDS(ON)MAX
ID
Features
●New technology for high voltage device
●Low on-resistance and low conduction losses
●small package
●Ultra Low Gate Charge cause lower driving requirements
●100% Avalanche Tested
●ROHS compliant
Application
● Power factor correction(PFC)
● Switched mode power supplies(SMPS)
● Uninterruptible Power Supply(UPS)
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE65R360D
NCE65R360
NCE65R360F
TO-263
NCE65R360D
NCE65R360
NCE65R360F
TO-220
TO-220F
TO-263
TO-220
TO-220F
Table 1. Absolute Maximum Ratings (TC=25℃)
NCE65R360D
NCE65R360
Parameter
Symbol
NCE65R360F
Unit
650
V
V
Drain-Source Voltage (VGS=0V)
Gate-Source Voltage (VDS=0V)
VDS
VGS
±30
Continuous Drain Current at Tc=25°C
11
7
11*
7*
A
ID (DC)
ID (DC)
IDM (pluse)
PD
Continuous Drain Current at Tc=100°C
A
(Note 1)
33
33*
32.7
0.26
A
Pulsed drain current
Maximum Power Dissipation(Tc=25℃)
121
0.97
W
Derate above 25°C
W/°C
mJ
A
Single pulse avalanche energy (Note2)
Avalanche current(Note 1)
280
5.5
EAS
IAR
Repetitive Avalanche energy ,tAR limited by Tjmax
(Note 1)
0.5
EAR
mJ
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
http://www.ncepower.com
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