Datasheet > NCE65NF190T

NCE65NF190T

更新时间： 2024-11-19 15:18:51

品牌	Logo	应用领域
新洁能 - NCEPOWER		二极管
页数	文件大小	规格书
7页	707K
描述
新洁能提供击穿电压等级范围为500V至650V的N沟道SJ-IVNF系列功率MOSFET产品。基于新洁能SJ-IV技术的基础上，在保证业界先进的超低特征导通电阻的前提下，特别优化了体二极管特性，减

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NCE65NF190T 数据手册

NCE65NF190T

N-Channel Super Junction Power MOSFET Ⅳ

General Description

The series of devices use advanced trench gate super

junction technology and design to provide excellent RDS(ON)

with low gate charge. This super junction MOSFET fits the

industry’s AC-DC SMPS requirements for PFC, AC/DC

power conversion, and industrial power applications.

V_{DS min@Tjmax}

R_DS(ON)TYP

710

mΩ

165

Features

●Optimized body diode reverse recovery performance

●Low on-resistance and low conduction losses

●Small package

●Ultra Low Gate Charge cause lower driving requirements

●100% Avalanche Tested

●ROHS compliant

Application

●

Power factor correction（PFC）

Switched mode power supplies(SMPS)

Uninterruptible Power Supply（UPS）

LLC Half-bridge

Schematic diagram

 Intrinsic fast-recovery body diode

Package Marking And Ordering Information

Device

Device Package

Marking

NCE65NF190T

TO-247

NCE65NF190T

TO-247

Table 1. Absolute Maximum Ratings (T_C=25℃)

Parameter

Symbol

VDS

Value

650

Unit

Drain-Source Voltage (VGS=0V）

Gate-Source Voltage (VDS=0V) AC (f>1 Hz)

Gate-Source Voltage (VDS=0V) DC

Continuous Drain Current at Tc=25°C

Continuous Drain Current at Tc=100°C

Pulsed drain current ^{(Note 1)}

±30

±20

VGS

I_{D (DC)}

I_{DM (pluse)}

P_D

12.6

Maximum Power Dissipation(Tc=25°C)

Derate above 25°C

194

1.29

W/°C

Avalanche current^{(Note 1)}

I_AS

Drain Source voltage slope, V_DS≤480 V,

Reverse diode dv/dt，V_DS≤480 V,I_SD<I_D

Operating Junction and Storage Temperature Range

* limited by maximum junction temperature

dv/dt

T_J,T_STG

V/ns

°C

-55...+175

Wuxi NCE Power Co., Ltd

Page 1

http://www.ncepower.com V1.0

12 3 4 5 6 7

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