NCE65NF190
N-Channel Super Junction Power MOSFET Ⅳ
General Description
The series of devices use advanced trench gate super
junction technology and design to provide excellent RDS(ON)
with low gate charge. This super junction MOSFET fits the
industry’s AC-DC SMPS requirements for PFC, AC/DC
power conversion, and industrial power applications.
VDS min@Tjmax
RDS(ON)TYP
ID
710
165
18
V
mΩ
A
Qg
30
nC
Features
●Optimized body diode reverse recovery performance
●Low on-resistance and low conduction losses
●Small package
●Ultra Low Gate Charge cause lower driving requirements
●100% Avalanche Tested
●ROHS compliant
Application
●
●
●
●
Power factor correction(PFC)
Switched mode power supplies(SMPS)
Uninterruptible Power Supply(UPS)
LLC Half-bridge
Schematic diagram
Intrinsic fast-recovery body diode
Package Marking And Ordering Information
Device
Device Package
Marking
NCE65NF190
TO-220
NCE65NF190
TO-220
Table 1. Absolute Maximum Ratings (TC=25℃)
Parameter
Symbol
VDS
Value
650
Unit
V
Drain-Source Voltage (VGS=0V)
Gate-Source Voltage (VDS=0V) AC (f>1 Hz)
Gate-Source Voltage (VDS=0V) DC
Continuous Drain Current at Tc=25°C
Continuous Drain Current at Tc=100°C
Pulsed drain current (Note 1)
±30
±20
18
V
VGS
V
VGS
A
ID (DC)
ID (DC)
IDM (pluse)
PD
12.6
54
A
A
Maximum Power Dissipation(Tc=25°C)
Derate above 25°C
194
W
1.29
4
W/°C
A
Avalanche current(Note 1)
IAS
Drain Source voltage slope, VDS ≤480 V,
Reverse diode dv/dt,VDS ≤480 V,ISD<ID
Operating Junction and Storage Temperature Range
* limited by maximum junction temperature
50
dv/dt
dv/dt
TJ,TSTG
V/ns
V/ns
°C
15
-55...+175
Wuxi NCE Power Co., Ltd
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