Datasheet > NCE65NF068F

NCE65NF068F

更新时间： 2024-04-09 19:02:30

品牌	Logo	应用领域
新洁能 - NCEPOWER		二极管
页数	文件大小	规格书
7页	709K
描述
新洁能提供击穿电压等级范围为500V至650V的N沟道SJ-IVNF系列功率MOSFET产品。基于新洁能SJ-IV技术的基础上，在保证业界先进的超低特征导通电阻的前提下，特别优化了体二极管特性，减

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NCE65NF068F 数据手册

NCE65NF068F

N-Channel Super Junction Power MOSFET Ⅳ

General Description

The series of devices use advanced trench gate super

junction technology and design to provide excellent RDS(ON)

with low gate charge. This super junction MOSFET fits the

industry’s AC-DC SMPS requirements for PFC, AC/DC

power conversion, and industrial power applications.

V_{DS min@Tjmax}

R_DS(ON)TYP

710

mΩ

Features

●Optimized body diode reverse recovery performance

●Low on-resistance and low conduction losses

●Small package

●Ultra Low Gate Charge cause lower driving requirements

●100% Avalanche Tested

●ROHS compliant

Application

●

Power factor correction（PFC）

Switched mode power supplies(SMPS)

Uninterruptible Power Supply（UPS）

LLC Half-bridge

Schematic diagram

 Intrinsic fast-recovery body diode

Package Marking And Ordering Information

Device

Device Package

Marking

NCE65NF068F

T0-220F

NCE65NF068F

Table 1. Absolute Maximum Ratings (T_C=25℃)

Parameter

Symbol

VDS

Value

650

Unit

Drain-Source Voltage (VGS=0V）

Gate-Source Voltage (VDS=0V) AC (f>1 Hz)

Gate-Source Voltage (VDS=0V) DC

Continuous Drain Current at Tc=25°C

Continuous Drain Current at Tc=100°C

Pulsed drain current ^{(Note 1)}

±30

±20

VGS

I_{D (DC)}

I_{DM (pluse)}

P_D

31.5

135

Maximum Power Dissipation(Tc=25°C)

Derate above 25°C

35.5

0.24

400

W/°C

Single pulse avalanche energy ^{(Note 2)}

Avalanche current^{(Note 1)}

EAS

I_AS

(Note 1)

Repetitive Avalanche energy ，t_ARlimited by T_jmax

0.9

E_AR

V/ns

°C

Drain Source voltage slope, V_DS≤480 V,

Reverse diode dv/dt，V_DS≤480 V,I_SD<I_D

dv/dt

T_J,T_STG

Operating Junction and Storage Temperature Range

-55...+175

Wuxi NCE Power Co., Ltd

Page 1

http://www.ncepower.com V1.1

12 3 4 5 6 7

下载PDF

与NCE65NF068F相关器件

型号	品牌	描述	获取价格	数据表
NCE65NF068LL	NCEPOWER	新洁能提供击穿电压等级范围为500V至650V的N沟道SJ-IVNF系列功率MOSFET产	获取价格
NCE65NF068T	NCEPOWER	新洁能提供击穿电压等级范围为500V至650V的N沟道SJ-IVNF系列功率MOSFET产	获取价格
NCE65NF068V	NCEPOWER	新洁能提供击穿电压等级范围为500V至650V的N沟道SJ-IVNF系列功率MOSFET产	获取价格
NCE65NF099	NCEPOWER	新洁能提供击穿电压等级范围为500V至650V的N沟道SJ-IVNF系列功率MOSFET产	获取价格
NCE65NF099D	NCEPOWER	新洁能提供击穿电压等级范围为500V至650V的N沟道SJ-IVNF系列功率MOSFET产	获取价格
NCE65NF099F	NCEPOWER	新洁能提供击穿电压等级范围为500V至650V的N沟道SJ-IVNF系列功率MOSFET产	获取价格