Datasheet > NCE60P04SN

NCE60P04SN

更新时间： 2024-03-03 10:10:57

品牌	Logo	应用领域
新洁能 - NCEPOWER		开关
页数	文件大小	规格书
7页	358K
描述
新洁能提供的N型12V~200V和P型12V~150V沟槽型（Trench）功率MOSFET产品，采用先进的工艺制造技术、更优的工艺条件、精细优化的器件结构不断优化产品导通电阻、开关特性、可靠性等

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NCE60P04SN 数据手册

NCE60P04SN

http://www.ncepower.com

NCE P-Channel Enhancement Mode Power MOSFET

Description

The NCE60P04SN uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge .This

device is well suited for use as a load switch or in PWM

applications.

Schematic diagram

General Features

● V_DS=-60V,I_D=-4A

R_DS(ON)<120mΩ @ V_GS=-10V

R_DS(ON)<170mΩ @ V_GS=-4.5V

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Excellent package for good heat dissipation

Marking and pin assignment

Application

● Load switch

● PWM application

SOT23-6L top view

Tape width

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Quantity

3000 units

60P04SN

NCE60P04SN

SOT-23-6L

Ø180mm

8 mm

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter

Symbol

V^DS

Limit

-60

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

Pulsed Drain Current

±20

V^GS

-4

-12

I_D

I_DM

Maximum Power Dissipation

1.5

℃

P_D

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance, Junction-to-Ambient^{(Note 2)}

Thermal Resistance, Junction-to-Lead^{(Note 2)}

R_θJA

R_θJL

83.3

℃/W

Wuxi NCE Power Co., Ltd

Page 1

V2.0

12 3 4 5 6 7

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