Datasheet > NCE60P03R

NCE60P03R

更新时间： 2024-03-03 10:09:13

品牌	Logo	应用领域
新洁能 - NCEPOWER		开关
页数	文件大小	规格书
7页	656K
描述
新洁能提供的N型12V~200V和P型12V~150V沟槽型（Trench）功率MOSFET产品，采用先进的工艺制造技术、更优的工艺条件、精细优化的器件结构不断优化产品导通电阻、开关特性、可靠性等

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NCE60P03R 数据手册

http://www.ncepower.com

NCE60P03R

NCE P-Channel Enhancement Mode Power MOSFET

Description

General Features

● V_DS=-60V,I_D=-3A

The NCE60P03R uses advanced trench technology and design

to provide excellent R_DS(ON)with low gate charge .This device is

well suited for use as a load switch or in PWM applications.

R_DS(ON)<170mΩ @ V_GS=-10V

R_DS(ON)<220mΩ @ V_GS=-4.5V

Application

● Load switch

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Excellent package for good heat dissipation

● 150 °C operating temperature

● PWM application

100% UIS TESTED!

100% ΔVds TESTED!

● Pb-free lead plating

SOT-223-3L

Schematic Diagram

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

NCE60P03R

SOT-223-3L

Ø330mm

16mm

2500 units

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter

Symbol

VDS

Limit

-60

Unit

Drain-Source Voltage

Gate-Source Voltage

±20

VGS

Drain Current-Continuous (T_A=25℃)

Drain Current-Continuous (T_A=70℃)

Pulsed Drain Current ^{(Note 1)}

-3

-2.4

-12

2.75

I_D

I_DM

Maximum Power Dissipation

℃

P_D

Single pulse avalanche energy ^{(Note 5)}

Operating Junction and Storage Temperature Range

E_AS

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance, Junction-to-Ambient^{(Note 2)}

Thermal Resistance, Junction-to-Case

R_θJA

R_θJC

45.5

℃/W

Wuxi NCE Power Co., Ltd

Page1

V1.0

12 3 4 5 6 7

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