NCE60P02Y
http://www.ncepower.com
NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE60P02Y uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge .This
device is well suited for use as a load switch or in PWM
applications.
General Features
● VDS =-60V,ID =-2A
Schematic diagram
RDS(ON) <160mΩ @ VGS=-10V
RDS(ON) <200mΩ @ VGS=-4.5V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
Marking and pin Assignment
Application
● Load switch
● PWM application
SOT-23-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
3000 units
60P02Y
NCE60P02Y
SOT23-3L
Ø180mm
8 mm
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Limit
-60
Unit
Drain-Source Voltage
V
V
VDS
Gate-Source Voltage
±20
VGS
Drain Current-Continuous
Pulsed Drain Current (Note 1)
-2
-8
A
ID
A
IDM
Maximum Power Dissipation
1.7
W
℃
PD
Operating Junction and Storage Temperature Range
-55 To 150
TJ,TSTG
Thermal Characteristic
Thermal Resistance, Junction-to-Ambient(Note 2)
RθJA
73.5
℃/W
Electrical Characteristics (TC=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
-60
-
-
V
Wuxi NCE Power Co., Ltd
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