Datasheet > NCE60NP4035K

NCE60NP4035K

更新时间： 2024-04-09 19:00:34

品牌	Logo	应用领域
新洁能 - NCEPOWER		/
页数	文件大小	规格书
9页	978K
描述
新洁能提供的12V~100VComplementary（N、P型互补式）MOSFET产品，是通过将P型与N型Trench功率MOSFET产品分别以高、低边互补配置的方式集成至单个封装中，极大程度上

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NCE60NP4035K 数据手册

NCE60NP4035K

http://www.ncepower.com

NCE N&P-Channel complementary Power MOSFET

Description

The NCE60NP4035K uses advanced trench technology

and design to provide excellent R_DS(ON)with low gate

charge. It can be used in a wide variety of applications.

General Features

N channel

Schematic diagram

● V_DS=60V,I_D=40A

R_DS(ON)<15.5mΩ @ V_GS=10V

R_DS(ON)<22mΩ @ V_GS=4.5V

p channel

● V_DS=-60V,I_D=-35A

R_DS(ON)<35mΩ @ V_GS=-10V

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high E_AS

● Excellent package for good heat dissipation

● Special process technology for high ESD capability

Marking and pin assignment

Application

● H-bridge

● Inverters

100% UIS TESTED!

100% ΔVds TESTED!

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

60NP4035K

NCE60NP4035K

TO-252-4L

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter

Symbol

V_DS

N-Channel P-Channel

Unit

Drain-Source Voltage

Gate-Source Voltage

±20

-60

±20

V_GS

T_C=25℃

-35

Continuous Drain Current

I_D

T_C=100℃

-24.5

-140

Pulsed Drain Current ^{(Note 1)}

Maximum Power Dissipation

I_DM

P_D

160

T_C=25℃

℃

Operating Junction and Storage Temperature Range

T_J,T_STG

-55 To 175

Thermal Characteristic

Thermal Resistance,Junction-to-Case^{(Note 2)}

R_θJC

1.88

℃/W

Wuxi NCE Power Co., Ltd

Page1

V3.0

12 3 4 5 6 7...9

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