Datasheet > NCE60NP2016G

NCE60NP2016G

更新时间： 2024-11-09 17:01:55

品牌	Logo	应用领域
新洁能 - NCEPOWER		/
页数	文件大小	规格书
10页	993K
描述
新洁能提供的12V~100VComplementary（N、P型互补式）MOSFET产品，是通过将P型与N型Trench功率MOSFET产品分别以高、低边互补配置的方式集成至单个封装中，极大程度上

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NCE60NP2016G 数据手册

Pb Free Product

http://www.ncepower.com

NCE60NP2016G

NCE N&P-Channel complementary Power MOSFET

Description

The NCE60NP2016G uses advanced trench technology

and design to provide excellent R_DS(ON)with low gate

charge. It can be used in a wide variety of applications.

General Features

N channel

Schematic diagram

● V_DS=60V,I_D=20A

R_DS(ON)<28mΩ @ V_GS=10V

R_DS(ON)<32mΩ @ V_GS=4.5V

p channel

● V_DS=-60V,I_D=-16A

R_DS(ON)<60mΩ @ V_GS=-10V

R_DS(ON)<72mΩ @ V_GS=-4.5V

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high E_AS

● Excellent package for good heat dissipation

● Special process technology for high ESD capability

Marking and pin assignment

Application

● H-bridge

Top View

Bottom View

● Inverters

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

60NP2016G

NCE60NP2016G

DFN5X6-8L

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter

Symbol

V_DS

N-Channel P-Channel

Unit

Drain-Source Voltage

Gate-Source Voltage

±20

-60

±20

-16

V_GS

T_C=25℃

Continuous Drain Current

I_D

T_C=100℃

-11.2

-48

Pulsed Drain Current ^{(Note 1)}

I_DM

P_D

Maximum Power Dissipation

Single pulse avalanche energy ^{(Note 5)}

T_C=25℃

E_AS

℃

Operating Junction and Storage Temperature Range

T_J,T_STG

-55 To 150

Thermal Characteristic

Thermal Resistance,Junction-to-Case^{(Note 2)}

R_θJC

℃/W

Wuxi NCE Power Co., Ltd

Page1

V2.0

12 3 4 5 6 7...10

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