Datasheet > NCE60NP09S

NCE60NP09S

更新时间： 2024-04-09 19:01:00

品牌	Logo	应用领域
新洁能 - NCEPOWER		/
页数	文件大小	规格书
10页	1011K
描述
新洁能提供的12V~100VComplementary（N、P型互补式）MOSFET产品，是通过将P型与N型Trench功率MOSFET产品分别以高、低边互补配置的方式集成至单个封装中，极大程度上

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NCE60NP09S 数据手册

NCE60NP09S

http://www.ncepower.com

NCE 60V Complementary MOSFET

Description

The NCE60NP09S uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

General Features

N channel

Schematic diagram

● V_DS=60V,I_D=9A

R_DS(ON)<28mΩ @ V_GS=10V

R_DS(ON)<34mΩ @ V_GS=4.5V

p channel

● V_DS=-60V,I_D=-9A

R_DS(ON)<54mΩ @ V_GS=-10V

R_DS(ON)<70mΩ @ V_GS=-4.5V

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high E_AS

● Excellent package for good heat dissipation

● Special process technology for high ESD capability

Marking and pin assignment

Application

● H-bridge

● Inverters

SOP-8 top view

Tape width

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Quantity

4000 units

NCE60NP09S

SOP-8

Ø330mm

12mm

Absolute Maximum Ratings (T_A=25℃unless otherwise noted)

Parameter

Symbol

V_DS

N-Channel P-Channel

Unit

Drain-Source Voltage

Gate-Source Voltage

-60

V_GS

±20

T_C=25℃

-9

-6.3

Continuous Drain Current

I_D

T_C=100℃

6.3

Pulsed Drain Current ^{(Note 1)}

Maximum Power Dissipation

I_DM

P_D

-36

T_C=25℃

℃

Operating Junction and Storage Temperature Range

T_J,T_STG

-55 To 150

Thermal Characteristic

Thermal Resistance,Junction-to- Ambient ^{(Note 2)}

Thermal Resistance,Junction-to- Lead ^{(Note 2)}

R_θJA

41.67

℃/W

N-channel

P-channel

N-channel

P-channel

R_θJA

R_θJL

Wuxi NCE Power Co., Ltd

Page 1

V1.0

12 3 4 5 6 7...10

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