NCE60NF260D
N-Channel Super Junction Power MOSFET Ⅳ
General Description
The series of devices use advanced trench gate super
junction technology and design to provide excellent RDS(ON)
with low gate charge. This super junction MOSFET fits the
industry’s AC-DC SMPS requirements for PFC, AC/DC
power conversion, and industrial power applications.
VDS min@Tjmax
650
230
14
V
mΩ
A
RDS(ON)TYP.
ID
Qg
19
nC
Features
●Optimized body diode reverse recovery performance
●Low on-resistance and low conduction losses
●Small package
●Ultra Low Gate Charge cause lower driving requirements
●100% Avalanche Tested
●ROHS compliant
Application
●
●
●
●
Power factor correction(PFC)
Switched mode power supplies(SMPS)
Uninterruptible Power Supply(UPS)
LLC Half-bridge
Intrinsic fast-recovery body diode
Package Marking And Ordering Information
Device
Device Package
Marking
NCE60NF260D
TO-263-2L
NCE60NF260D
TO-263
Table 1. Absolute Maximum Ratings (TC=25℃)
Parameter
Symbol
VDS
Value
600
Unit
V
Drain-Source Voltage (VGS=0V)
±30
±20
14
V
Gate-Source Voltage (VDS=0V) ,AC (f>1 Hz)
Gate-Source Voltage (VDS=0V) ,DC
Continuous Drain Current at Tc=25°C
Continuous Drain Current at Tc=100°C
VGS
V
VGS
A
ID (DC)
ID (DC)
IDM (pluse)
PD
9.8
A
(Note 1)
42
A
Pulsed drain current
Maximum Power Dissipation(Tc=25℃)
128
W
Derate above 25°C
0.85
2.5
W/°C
A
(Note 2)
IAS
Single pulse avalanche current
50
Reverse diode dv/dt,VDS ≤480 V,ISD<ID
Drain Source voltage slope,VDS ≤480 V
Operating Junction and Storage Temperature Range
dv/dt
dv/dt
TJ,TSTG
V/ns
V/ns
°C
50
-55...+175
Wuxi NCE Power Co., Ltd
Page 1
http://www.ncepower.com
V1.1