Datasheet > NCE60NF040T

NCE60NF040T

更新时间： 2024-04-09 19:03:09

品牌	Logo	应用领域
新洁能 - NCEPOWER		二极管
页数	文件大小	规格书
9页	929K
描述
新洁能提供击穿电压等级范围为500V至650V的N沟道SJ-IVNF系列功率MOSFET产品。基于新洁能SJ-IV技术的基础上，在保证业界先进的超低特征导通电阻的前提下，特别优化了体二极管特性，减

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NCE60NF040T 数据手册

NCE60NF040T

N-Channel Super Junction Power MOSFET Ⅳ

General Description

The series of devices use advanced trench gate super

junction technology and design to provide ultra-low RDS(ON)

and low gate charge and With a rapid recovery body

diode.This super junction MOSFET fits the industry’s AC-DC

SMPS requirements for PFC, AC/DC power conversion,

industrial power applications,Fast charger, new energy

vehicle charging pile, on-board OBC etc.

V_{DS min@Tjmax}

650

mΩ

R_DS(ON)TYP.

I_D

Features

●New technology for high voltage device

●Ultra low on-resistance and ultra low conduction losses

●Ultra Low Gate Charge cause lower driving requirements

●Diode reverse recovery speed is super fast

●100% Avalanche Tested and 100% T_rrTested

●High reliability

 Intrinsic fast-recovery body diode

●ROHS compliant

Application

Schematic diagram

●

Power factor correction（PFC）

Switched mode power supplies(SMPS)

Uninterruptible Power Supply（UPS）

On-board charger(OBC)

LLC Half-bridge

Package Marking And Ordering Information

Device

Device Package

Marking

NCE60NF040T

TO-247

Table 1. Absolute Maximum Ratings (T_C=25℃)

Parameter

Symbol

VDS

Value

600

±30

±20

Unit

Drain-Source Voltage (VGS=0V）

Gate-Source Voltage (VDS=0V) ,AC (f>1 Hz)

Gate-Source Voltage (VDS=0V) ,DC

Continuous Drain Current at Tc=25°C

Continuous Drain Current at Tc=100°C

VGS

I_{D (DC)}

I_{DM (pluse)}

P_D

42.7

183

411

(Note 1)

Pulsed drain current

Maximum Power Dissipation(Tc=25℃)

Derate above 25°C

2.74

484

W/°C

(Note 2)

E^AS

I_AS

Single pulse avalanche energy

(Note 2)

Single pulse avalanche current

Wuxi NCE Power Co., Ltd

Page 1

http://www.ncepower.com

V1.0

12 3 4 5 6 7...9

下载PDF

与NCE60NF040T相关器件

型号	品牌	描述	获取价格	数据表
NCE60NF055	NCEPOWER	新洁能提供击穿电压等级范围为500V至650V的N沟道SJ-IVNF系列功率MOSFET产	获取价格
NCE60NF055D	NCEPOWER	新洁能提供击穿电压等级范围为500V至650V的N沟道SJ-IVNF系列功率MOSFET产	获取价格
NCE60NF055F	NCEPOWER	新洁能提供击穿电压等级范围为500V至650V的N沟道SJ-IVNF系列功率MOSFET产	获取价格
NCE60NF055T	NCEPOWER	新洁能提供击穿电压等级范围为500V至650V的N沟道SJ-IVNF系列功率MOSFET产	获取价格
NCE60NF080	NCEPOWER	新洁能提供击穿电压等级范围为500V至650V的N沟道SJ-IVNF系列功率MOSFET产	获取价格
NCE60NF080D	NCEPOWER	新洁能提供击穿电压等级范围为500V至650V的N沟道SJ-IVNF系列功率MOSFET产	获取价格