NCE60NF019T
N-Channel Super Junction Power MOSFET Ⅳ
General Description
The series of devices use advanced trench gate super
junction technology and design to provide ultra-low RDS(ON)
and low gate charge and With a rapid recovery body
diode.This super junction MOSFET fits the industry’s AC-DC
SMPS requirements for PFC, AC/DC power conversion,
industrial power applications,Fast charger, new energy
vehicle charging pile, on-board OBC etc.
VDS min@Tjmax
650
17
V
mΩ
A
RDS(ON)TYP.
ID
107
184
Qg
nC
Features
●New technology for high voltage device
●Ultra low on-resistance and ultra low conduction losses
●Ultra Low Gate Charge cause lower driving requirements
●Diode reverse recovery speed is super fast
●High reliability
●RoHS&Halogen Free
Intrinsic fast-recovery body diode
Application
●
●
●
●
Power factor correction(PFC)
Switched mode power supplies(SMPS)
Uninterruptible Power Supply(UPS)
On-board charger(OBC)
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE60NF019T
NCE60NF019T
TO-247-3L
Table 1. Absolute Maximum Ratings (TC=25℃)
Parameter
Symbol
VDS
Value
600
±30
±20
107
74.9
321
532
3.54
1156
17
Unit
V
Drain-Source Voltage (VGS=0V)
V
Gate-Source Voltage (VDS=0V) ,AC (f>1 Hz)
Gate-Source Voltage (VDS=0V) ,DC
Continuous Drain Current at Tc=25°C
Continuous Drain Current at Tc=100°C
VGS
V
VGS
A
ID (DC)
ID (DC)
IDM (pluse)
PD
A
(Note 1)
A
Pulsed drain current
Maximum Power Dissipation(Tc=25℃)
W
Derate above 25°C
W/°C
mJ
A
(Note 2)
EAS
IAS
Single pulse avalanche energy
(Note 2)
Single pulse avalanche current
(Note 1)
1.0
EAR
dv/dt
mJ
V/ns
Repetitive Avalanche energy ,tAR limited by Tjmax
50
Reverse diode dv/dt,VDS ≤480 V,ISD<ID
Wuxi NCE Power Co., Ltd
Page 1
http://www.ncepower.com
V1.2