Datasheet > NCE60ND45G

NCE60ND45G

更新时间： 2024-04-09 18:59:31

品牌	Logo	应用领域
新洁能 - NCEPOWER		/
页数	文件大小	规格书
7页	341K
描述
????新洁能提供的P型20V~60V和N型18V~100V的Dual（双芯）MOSFET产品，通过将两颗P型或者N型的功率MOSFET产品以并联合封的方式集成到单个封装中，极大程度上优化了产品结

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NCE60ND45G 数据手册

NCE60ND45G

http://www.ncepower.com

NCE N-Channel Enhancement Mode Power MOSFET

Description

The NCE60ND45G uses advanced trench technology and

General Features

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

● V_DS= 60V,I_D=45A

R_DS(ON)< 15mΩ @ V_GS=10V (Typ:11mΩ)

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Low gate to drain charge to reduce switching losses

Application

● Power switching application

● Load switch

100% UIS TESTED!

100% ∆Vds TESTED!

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Schematic Diagram

DFN 5X6

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

12mm

Quantity

NCE60ND45G

DFN5X6-8L

Ø330mm

5000

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^DS

±20

V^GS

I_D

I_D(100℃)

I_DM

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

140

Single pulse avalanche energy ^{(Note 5)}

E_AS

260

℃

Maximum Power Dissipation

P_D

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Case^{(Note 2)}

R_θJC

2.08

℃/W

Wuxi NCE Power Co., Ltd

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