Datasheet > NCE60ND20AK

NCE60ND20AK

更新时间： 2024-04-09 19:00:29

品牌	Logo	应用领域
新洁能 - NCEPOWER		/
页数	文件大小	规格书
7页	658K
描述
????新洁能提供的P型20V~60V和N型18V~100V的Dual（双芯）MOSFET产品，通过将两颗P型或者N型的功率MOSFET产品以并联合封的方式集成到单个封装中，极大程度上优化了产品结

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NCE60ND20AK 数据手册

Pb Free Product

http://www.ncepower.com

NCE60ND20AK

NCE N-Channel Enhancement Mode Power MOSFET

Description

The NCE60ND20AK uses advanced trench technology

and design to provide excellent R_DS(ON)with low gate

charge. It can be used in a wide variety of applications.

General Features

● V_DS=60V,I_D=20A

Schematic diagram

R_DS(ON)<23mΩ @ V_GS=10V

R_DS(ON)<30mΩ @ V_GS=4.5V

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high E_AS

● Excellent package for good heat dissipation

● Special process technology for high ESD capability

Application

● Power switching application

● Hard switched and high frequency circuits

● Uninterruptible power supply

Marking and pin assignment

100% UIS TESTED!

100% ΔVds TESTED!

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

NCE60ND20AK

TO-252-4L

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

VGS

Gate-Source Voltage

±20

Drain Current-Continuous

I_D

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

I_D(100℃)

I_DM

Maximum Power Dissipation

Derating factor

P_D

0.3

W/℃

℃

Single pulse avalanche energy ^{(Note 5)}

Operating Junction and Storage Temperature Range

E_AS

-55 To 175

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Case^{(Note 2)}

R_θJC

3.3

℃/W

Electrical Characteristics (T_C=25℃unless otherwise noted)

Wuxi NCE Power Co., Ltd

Page1

V2.0

12 3 4 5 6 7

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