Datasheet > NCE60N2K1R

NCE60N2K1R

更新时间： 2024-04-09 18:59:40

品牌	Logo	应用领域
新洁能 - NCEPOWER		/
页数	文件大小	规格书
7页	755K
描述
新洁能提供击穿电压等级范围为500V至1050V的N沟道SJ-IV系列功率MOSFET产品。采用第四代技术超结技术的产品，具有优异的性能，实现了业界先进的超低特征导通电阻（Ron,sp），在相同体

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NCE60N2K1R 数据手册

NCE60N2K1R

N-Channel Super Junction Power MOSFET Ⅳ

General Description

The series of devices use advanced trench gate super

junction technology and design to provide ultra-low RDS(ON)

and low gate charge and With a rapid recovery body

diode.This super junction MOSFET fits the industry’s AC-DC

SMPS requirements for PFC, AC/DC power conversion,

industrial power applications,Fast charger, new energy

vehicle charging pile, on-board OBC etc.

V_{DS min@Tjmax}

650

1950

1.8

mΩ

R_DS(ON)TYP.

I_D

3.9

Features

●New technology for high voltage device

●Ultra low on-resistance and ultra low conduction losses

●Ultra Low Gate Charge cause lower driving requirements

●Diode reverse recovery speed is super fast

●100% Avalanche Tested and 100% T_rrTested

●High reliability

●ROHS compliant

Application

●

Power factor correction（PFC）

Switched mode power supplies(SMPS)

Uninterruptible Power Supply（UPS）

On-board charger(OBC)

Schematic diagram

Package Marking And Ordering Information

Device

Device Package

Marking

NCE60N2K1R

SOT-223-2L

NCE60N2K1R

Table 1. Absolute Maximum Ratings (T_C=25℃)

Parameter

Symbol

VDS

Value

600

Unit

Drain-Source Voltage (VGS=0V）

±30

±20

1.8

Gate-Source Voltage (VDS=0V) ,AC (f>1 Hz)

Gate-Source Voltage (VDS=0V) ,DC

Continuous Drain Current at Tc=25°C

Continuous Drain Current at Tc=100°C

VGS

I_{D (DC)}

I_{DM (pluse)}

P_D

1.26

5.4

(Note 1)

Pulsed drain current

Maximum Power Dissipation(Tc=25℃)

4.7

Derate above 25°C

0.03

1.25

0.5

W/°C

(Note 2)

E^AS

I_AS

Single pulse avalanche energy

(Note 2)

Single pulse avalanche current

(Note 1)

0.02

E_AR

Repetitive Avalanche energy ，t_ARlimited by T_jmax

Wuxi NCE Power Co., Ltd

Page 1

http://www.ncepower.com

V1.0

12 3 4 5 6 7

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