Pb Free Product
http://www.ncepower.com
NCE6075
NCE N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The NCE6075 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
GENERAL FEATURES
● VDS =60V,ID =75A
RDS(ON) < 15mΩ @ VGS=10V (Typ:8.4mΩ)
Schematic diagram
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Application
Marking and pin Assignment
●
●
●
Power switching application
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply
100% UIS TESTED!
100% ΔVds TESTED!
TO-220 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
NCE6075
NCE6075
TO-220
-
-
-
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter Symbol
Limit
60
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
VDS
VGS
±20
V
75
50
A
A
ID
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
ID (100℃)
IDM
300
120
0.8
450
A
Maximum Power Dissipation
W
PD
Derating factor
W/℃
mJ
℃
Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature Range
EAS
-55 To 175
TJ,TSTG
Wuxi NCE Power Semiconductor Co., Ltd
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