NCE6065AG
http://www.ncepower.com
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE6065AG uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
● VDS =60V,ID =65A
RDS(ON) <6.3mΩ @ VGS=10V
RDS(ON) <7.8mΩ @ VGS=10V
Schematic diagram
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
DFN 5X6
Application
● PWM
● Load Switching
Top View
Bottom View
100% UIS TESTED!
100% ΔVds TESTED!
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
NCE6065AG
NCE6065AG
DFN5X6-8L
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
VDS
Limit
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
60
±20
V
VGS
65
A
A
ID
ID (100℃)
IDM
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
45.5
260
A
Maximum Power Dissipation
52
W
PD
Derating factor
0.41
310
W/℃
mJ
℃
Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature Range
EAS
-55 To 150
TJ,TSTG
Thermal Characteristic
Wuxi NCE Power Co., Ltd
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