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NCE6030K PDF预览

NCE6030K

更新时间: 2024-11-19 15:18:47
品牌 Logo 应用领域
新洁能 - NCEPOWER 开关
页数 文件大小 规格书
7页 455K
描述
新洁能提供的N型12V~200V和P型12V~150V沟槽型(Trench)功率MOSFET产品,采用先进的工艺制造技术、更优的工艺条件、精细优化的器件结构不断优化产品导通电阻、开关特性、可靠性等

NCE6030K 数据手册

 浏览型号NCE6030K的Datasheet PDF文件第2页浏览型号NCE6030K的Datasheet PDF文件第3页浏览型号NCE6030K的Datasheet PDF文件第4页浏览型号NCE6030K的Datasheet PDF文件第5页浏览型号NCE6030K的Datasheet PDF文件第6页浏览型号NCE6030K的Datasheet PDF文件第7页 
Pb Free Product  
http://www.ncepower.com  
NCE6030K  
NCE N-Channel Enhancement Mode Power MOSFET  
Description  
The NCE6030K uses advanced trench technology and  
design to provide excellent RDS(ON) with low gate charge. It  
can be used in a wide variety of applications.  
General Features  
VDS =60V,ID =30A  
RDS(ON) <27m@ VGS=10V  
Schematic diagram  
High density cell design for ultra low Rdson  
Fully characterized avalanche voltage and current  
Good stability and uniformity with high EAS  
Excellent package for good heat dissipation  
Special process technology for high ESD capability  
Application  
Power switching application  
Marking and pin assignment  
Hard switched and high frequency circuits  
Uninterruptible power supply  
100% UIS TESTED!  
100% Vds TESTED!  
TO-252-2L top view  
Package Marking and Ordering Information  
Device Marking  
Device  
Device Package  
Reel Size  
Tape width  
Quantity  
NCE6030K  
NCE6030K  
TO-252-2L  
-
-
-
Absolute Maximum Ratings (TC=25unless otherwise noted)  
Parameter  
Symbol  
Limit  
60  
Unit  
Drain-Source Voltage  
V
V
VDS  
VGS  
Gate-Source Voltage  
±20  
Drain Current-Continuous  
30  
20  
A
ID  
Drain Current-Continuous(TC=100)  
Pulsed Drain Current  
ID (100)  
IDM  
A
74  
A
Maximum Power Dissipation  
Derating factor  
Single pulse avalanche energy (Note 5)  
50  
W
PD  
0.33  
144  
W/℃  
mJ  
EAS  
Operating Junction and Storage Temperature Range  
-55 To 175  
TJ,TSTG  
Wuxi NCE Power Semiconductor Co., Ltd  
Page 1  
v1.0  

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