Datasheet > NCE5520Q

NCE5520Q

更新时间： 2024-03-03 10:10:19

品牌	Logo	应用领域
新洁能 - NCEPOWER		开关
页数	文件大小	规格书
7页	311K
描述
新洁能提供的N型12V~200V和P型12V~150V沟槽型（Trench）功率MOSFET产品，采用先进的工艺制造技术、更优的工艺条件、精细优化的器件结构不断优化产品导通电阻、开关特性、可靠性等

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NCE5520Q 数据手册

Pb Free Product

http://www.ncepower.com

NCE5520Q

NCE N-Channel Enhancement Mode Power MOSFET

Description

The NCE5520Q uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

General Features

● V_DS=55V,I_D=20A

Schematic diagram

R_DS(ON)< 22mΩ @ V_GS=10V (Typ:19mΩ)

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

Pin assignment

Application

● Industrial power supplies

● LED backlighting

DFN3X3 EP top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

NCE5520Q

DFN3X3EP

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^DS

±20

V^GS

I_D

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

I_D(100℃)

I_DM

Maximum Power Dissipation

Derating factor

W/℃

℃

P_D

0.23

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Case^{(Note 2)}

R_θJC

3.6

℃/W

Wuxi NCE Power Semiconductor Co., Ltd

Page 1

v1.0

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