Pb Free Product
NCE50TD120VT
1200V, 50A, Trench FS II Fast IGBT
General Description
Using NCE's proprietary trench design and advanced FS (Field Stop) second
generation technology, the 1200V Trench FSII IGBT offers superior conduction and
switching performances, and easy parallel operation;
Features
Trench FSII Technology Offering
Very low VCE(sat)
High speed switching
Positive temperature coefficient in VCE(sat)
Very tight parameter distribution
High ruggedness, temperature stable behavior
Schematic diagram
Application
PV power
Three-level Solar String Inverter
UPS
Package Marking and Ordering Information
Device
Device Package
Device Marking
NCE50TD120VT
TO-247
NCE50TD120VT
TO-247
Absolute Maximum Ratings (TC=25°C unless otherwise noted)
Symbol
VCES
Parameter
Value
1200
±30
100
50
Units
Collector-Emitter Voltage
V
V
VGES
Gate- Emitter Voltage
Collector Current
A
IC
Collector Current @TC = 100 °C
A
ICpuls
-
Pulsed Collector Current,tp limited by Tjmax
Turn off safe operating area,VCE=1200V,Tj=175°C
Diode Continuous Forward Current @TC = 100 °C
Diode Maximum Forward Current
200
200
50
A
A
IF
A
IFM
200
535
268
A
Power Dissipation @ TC = 25°C
W
W
PD
Power Dissipation @TC = 100 °C
TJ,Tstg
TL
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
-55 to +175
260
°C
°C
Wuxi NCE Power Co., Ltd
Page
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http://www.ncepower.com