Datasheet > NCE50TD120VT

NCE50TD120VT

更新时间： 2024-11-21 15:19:11

品牌	Logo	应用领域
新洁能 - NCEPOWER		开关双极性晶体管
页数	文件大小	规格书
13页	1673K
描述
新洁能提供击穿电压等级范围为1200V至1350V的N沟道IGBT器件。通过工艺与器件结构优化，新洁能提供高能效的IGBT产品。在导通压降与开关损耗之间做出了良好的权衡，能够大幅度提高系统效率。同

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NCE50TD120VT 数据手册

Pb Free Product

NCE50TD120VT

1200V, 50A, Trench FS II Fast IGBT

General Description

Using NCE's proprietary trench design and advanced FS (Field Stop) second

generation technology, the 1200V Trench FSII IGBT offers superior conduction and

switching performances, and easy parallel operation;

Features

 Trench FSII Technology Offering

 Very low V_CE(sat)

 High speed switching

 Positive temperature coefficient in V_CE(sat)

 Very tight parameter distribution

 High ruggedness, temperature stable behavior

Schematic diagram

Application

 PV power

 Three-level Solar String Inverter

 UPS

Package Marking and Ordering Information

Device

Device Package

Device Marking

NCE50TD120VT

TO-247

NCE50TD120VT

TO-247

Absolute Maximum Ratings (T_C=25°C unless otherwise noted)

Symbol

V_CES

Parameter

Value

1200

±30

100

Units

Collector-Emitter Voltage

V_GES

Gate- Emitter Voltage

Collector Current

I_C

Collector Current @T_C= 100 °C

I_Cpuls

Pulsed Collector Current，t_plimited by T_jmax

Turn off safe operating area，V_CE=1200V，T_j=175°C

Diode Continuous Forward Current @T_C= 100 °C

Diode Maximum Forward Current

200

I_F

I_FM

200

535

268

Power Dissipation @ T_C= 25°C

P_D

Power Dissipation @T_C= 100 °C

T_J,T_stg

T_L

Operating Junction and Storage Temperature Range

Maximum Temperature for Soldering

-55 to +175

260

°C

Wuxi NCE Power Co., Ltd

Page

V3.1

http://www.ncepower.com

12 3 4 5 6 7...13

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