NCE50NF600D
N-Channel Super Junction Power MOSFET Ⅳ
General Description
The series of devices use advanced trench gate super
junction technology and design to provide excellent RDS(ON)
with low gate charge. This super junction MOSFET fits the
industry’s AC-DC SMPS requirements for PFC, AC/DC
power conversion, and industrial power applications.
VDS min@Tjmax
550
520
6.3
V
mΩ
A
RDS(ON)TYP.
ID
Qg
9.5
nC
Features
●New technology for high voltage device
●Low on-resistance and low conduction losses
●Small package
●Ultra Low Gate Charge cause lower driving requirements
●100% Avalanche Tested
●ROHS compliant
Application
●
●
●
Power factor correction(PFC)
Switched mode power supplies(SMPS)
Uninterruptible Power Supply(UPS)
Intrinsic fast-recovery body diode
Package Marking And Ordering Information
Device
Device Package
Marking
NCE50NF600D
NCE50NF600D
TO-263-2L
Table 1. Absolute Maximum Ratings (TC=25℃)
Parameter
Symbol
VDS
Value
500
Unit
V
Drain-Source Voltage (VGS=0V)
±30
±20
6.3
V
Gate-Source Voltage (VDS=0V) ,AC (f>1 Hz)
Gate-Source Voltage (VDS=0V) ,DC
Continuous Drain Current at Tc=25°C
Continuous Drain Current at Tc=100°C
VGS
V
VGS
A
ID (DC)
ID (DC)
IDM (pluse)
PD
4.41
18.9
74
A
(Note 1)
A
Pulsed drain current
Maximum Power Dissipation(Tc=25℃)
W
Derate above 25°C
0.49
2.5
W/°C
A
(Note 2)
IAS
Single pulse avalanche current
15
Reverse diode dv/dt,VDS ≤480 V,ISD<ID
Drain Source voltage slope,VDS ≤480 V
Operating Junction and Storage Temperature Range
dv/dt
dv/dt
TJ,TSTG
V/ns
V/ns
°C
50
-55...+175
Wuxi NCE Power Co., Ltd
Page 1
http://www.ncepower.com
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