Datasheet > NCE4606B

NCE4606B

更新时间： 2024-04-09 18:58:55

品牌	Logo	应用领域
新洁能 - NCEPOWER		/
页数	文件大小	规格书
10页	397K
描述
新洁能提供的12V~100VComplementary（N、P型互补式）MOSFET产品，是通过将P型与N型Trench功率MOSFET产品分别以高、低边互补配置的方式集成至单个封装中，极大程度上

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NCE4606B 数据手册

http://www.ncepower.com

NCE4606B

N and P-Channel Enhancement Mode Power MOSFET

Description

The NCE4606B uses advanced trench technology to provide

excellent R_DS(ON)and low gate charge . The complementary

MOSFETs may be used to form a level shifted high side

switch, and for a host of other applications.

N-channel

P-channel

General Features

● N-Channel

Schematic diagram

V_DS= 30V,I_D=6A

_DS(ON)< 25mΩ @ V_GS=10V

_DS(ON)< 44mΩ @ V_GS=4.5V

● P-Channel

V_DS= -30V,I_D= -6A

_DS(ON)< 39mΩ @ V_GS=-10V

_DS(ON)< 51mΩ @ V_GS=-4.5V

● High power and current handing capability

● Lead free product is acquired

● Surface mount package

Marking and pin assignment

SOP-8 top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

NCE4606B

SOP-8

Ø330mm

12mm

4000 units

Absolute Maximum Ratings (T_A=25℃unless otherwise noted)

Parameter

Symbol

V_DS

N-Channel P-Channel

Unit

Drain-Source Voltage

Gate-Source Voltage

-30

±20

V_GS

±20

T_A=25℃

T_A=70℃

5.0

-6

Continuous Drain Current

I_D

-5.0

Pulsed Drain Current ^{(Note 1)}

Maximum Power Dissipation

I_DM

P_D

-24

T_A=25℃

2.0

℃

Operating Junction and Storage Temperature Range

T_J,T_STG

-55 To 150

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient ^(Note2)

R_θJA

N-Ch

P-Ch

62.5

℃/W

Thermal Resistance,Junction-to-Ambient ^(Note2)

Wuxi NCE Power Co., Ltd

Page 1

v1.0

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