Datasheet > NCE4555K

NCE4555K

更新时间： 2024-03-03 10:10:53

品牌	Logo	应用领域
新洁能 - NCEPOWER		开关
页数	文件大小	规格书
7页	623K
描述
新洁能提供的N型12V~200V和P型12V~150V沟槽型（Trench）功率MOSFET产品，采用先进的工艺制造技术、更优的工艺条件、精细优化的器件结构不断优化产品导通电阻、开关特性、可靠性等

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NCE4555K 数据手册

Pb Free Product

NCE4555K

http://www.ncepower.com

NCE N-Channel Enhancement Mode Power MOSFET

Description

The NCE4555K uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

General Features

● V_DS=45V,I_D=55A

Schematic diagram

R_DS(ON)=9.2mΩ @ V_GS=10V (Typ)

R_DS(ON)=13mΩ @ V_GS=4.5V (Typ)

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high E_AS

● Excellent package for good heat dissipation

Application

● Load switching

Marking and pin assignment

● Hard switched and high frequency circuits

● Uninterruptible power supply

100% UIS TESTED!

100% ΔVds TESTED!

TO-252-2L top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

NCE4555K

TO-252-2L

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter

Symbol

VDS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

Pulsed Drain Current

±20

VGS

220

I_D

I_DM

P_D

Maximum Power Dissipation

Derating factor

0.5

W/℃

℃

Single pulse avalanche energy ^{(Note 5)}

Operating Junction and Storage Temperature Range

E_AS

145

-55 To 175

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Case^{(Note 2)}

R_θJC

2.0

℃/W

Wuxi NCE Power Co., Ltd

Page 1

v1.0

12 3 4 5 6 7

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