Datasheet > NCE4435B

NCE4435B

更新时间： 2024-04-09 19:02:57

品牌	Logo	应用领域
新洁能 - NCEPOWER		开关
页数	文件大小	规格书
7页	709K
描述
新洁能提供的N型12V~200V和P型12V~150V沟槽型（Trench）功率MOSFET产品，采用先进的工艺制造技术、更优的工艺条件、精细优化的器件结构不断优化产品导通电阻、开关特性、可靠性等

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NCE4435B 数据手册

http://www.ncepower.com

NCE4435B

NCE P-Channel Enhancement Mode Power MOSFET

Description

The NCE4435B uses advanced trench technology to provide

excellent R_DS(ON), low gate charge and operation with gate

voltages as low as 4.5V. This device is suitable for use as a

load switch or in PWM applications.

General Features

● V_DS= -30V,I_D= -12A

Schematic diagram

R_DS(ON)< 11mΩ @ V_GS=-4.5V

R_DS(ON)< 16mΩ @ V_GS=-10V

● High Power and current handing capability

● Lead free product is acquired

● Surface mount package

Marking and pin assignment

Application

● PWM applications

● Load switch

● Power management

SOP-8 top view

Tape width

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Quantity

4000 units

NCE4435B

SOP-8

Ø330mm

12mm

Absolute Maximum Ratings (T_A=25℃unless otherwise noted)

Parameter

Symbol

VDS

Limit

-30

Unit

Drain-Source Voltage

Gate-Source Voltage

±20

VGS

Drain Current-Continuous (T_A=25℃)

Drain Current-Continuous (T_A=100℃)

Drain Current-Pulsed ^{(Note 1)}

-12

I_D

-8.4

-48

I_DM

P_D

Maximum Power Dissipation (T_A=25℃)

Maximum Power Dissipation (T_A=100℃)

Single pulse avalanche energy ^{(Note 5)}

Operating Junction and Storage Temperature Range

1.3

E_AS

125

-55 To 150

℃

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient ^{(Note 2)}

R_θJA

41.67

℃/W

Electrical Characteristics (T_A=25℃unless otherwise noted)

Wuxi NCE Power Co., Ltd

Page 1

V1.0

12 3 4 5 6 7

中文翻译

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