Datasheet > NCE40TD65BT

NCE40TD65BT

更新时间： 2024-11-14 15:18:35

品牌	Logo	应用领域
新洁能 - NCEPOWER		双极性晶体管
页数	文件大小	规格书
11页	1999K
描述
新洁能提供击穿电压等级范围为600V至650V的N沟道IGBT器件。通过注入增强（InjectionEnhance,IE）与场截止（FieldStop，FS）技术，新洁能IGBT系列产品在提供行业

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NCE40TD65BT 数据手册

Pb Free Product

NCE40TD65BT

650V, 40A, Trench FS II Fast IGBT

General Description

Using NCE's proprietary trench design and advanced FS (Field Stop) second

generation technology, the 650V Trench FS II IGBT offers superior conduction and

switching performances, and easy parallel operation;

Features

 Trench FSII Technology offering

 Very low V_CE(sat)

 High speed switching

 Positive temperature coefficient in V_CE(sat)

 Very tight parameter distribution

 High ruggedness, temperature stable behavior

Schematic diagram

Application

 Air Condition

 Inverters

 Motor drives

Package Marking and Ordering Information

Device

Device Package

Device Marking

NCE40TD65BT

TO-247-3L

NCE40TD65BT

TO-247-3L

Absolute Maximum Ratings (T_C=25°C unless otherwise noted)

Symbol

V_CES

Parameter

Value

Units

Collector-Emitter Voltage

650

±30

V_GES

Gate- Emitter Voltage

Collector Current

I_C

Collector Current @T_C= 100 °C

I_Cpuls

Pulsed Collector Current，t_plimited by T_jmax

Turn off safe operating area，V_CE=650V, T_j=175°C

Diode Continuous Forward Current @T_C= 100 °C

Diode Maximum Forward Current

Power Dissipation @ T_C= 25°C

160

I_F

I_FM

160

288

°C

P_D

Power Dissipation @T_C= 100 °C

144

T_J,T_stg

T_L

Operating Junction and Storage Temperature Range

Maximum Temperature for Soldering

-55 to +175

260

Short circuit withstand time V_GE=15V, V_CC≤400V,

Allowed number of short circuits<1000Time between

short circuits:≥1.0s,T_j≤150°C

t_sc

Wuxi NCE Power Co., Ltd

Page

V2.1

http://www.ncepower.com

12 3 4 5 6 7...11

中文翻译

下载PDF

与NCE40TD65BT相关器件

型号	品牌	获取价格	描述	数据表
NCE40TH60BP	NCEPOWER	获取价格	新洁能提供击穿电压等级范围为600V至650V的N沟道IGBT器件。通过注入增强（Inje
NCE40TH60BPF	NCEPOWER	获取价格	新洁能提供击穿电压等级范围为600V至650V的N沟道IGBT器件。通过注入增强（Inje
NCE40TH60BT	NCEPOWER	获取价格	新洁能提供击穿电压等级范围为600V至650V的N沟道IGBT器件。通过注入增强（Inje
NCE40TS120VTP	NCEPOWER	获取价格	新洁能提供击穿电压等级范围为1200V至1350V的N沟道IGBT器件。通过工艺与器件结构
NCE41	CTS	获取价格	Hard PZT
NCE4435	NCEPOWER	获取价格	新洁能提供的N型12V~200V和P型12V~150V沟槽型（Trench）功率MOSFE
NCE4435B	NCEPOWER	获取价格	新洁能提供的N型12V~200V和P型12V~150V沟槽型（Trench）功率MOSFE
NCE4435X	NCEPOWER	获取价格	新洁能提供的N型12V~200V和P型12V~150V沟槽型（Trench）功率MOSFE
NCE4503S	NCEPOWER	获取价格	新洁能提供的12V~100VComplementary（N、P型互补式）MOSFET产品，
NCE4525*	NCEPOWER	获取价格	新洁能提供的12V~100VComplementary（N、P型互补式）MOSFET产品，