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NCE40P40D
NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE40P40D uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge .This
device is well suited for high current load applications.
General Features
● VDS =-40V,ID =-40A
RDS(ON) <14mΩ @ VGS=-10V
Schematic diagram
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
Application
●
●
●
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
100% ∆Vds TESTED!
TO-263-2L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
NCE40P40D
NCE40P40D
TO-263-2L
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Limit
-40
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
V
V
VDS
±20
VGS
-40
-25
A
ID
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
ID (100℃)
IDM
A
-120
A
Maximum Power Dissipation
80
W
PD
Derating factor
Single pulse avalanche energy (Note 5)
0.53
W/℃
mJ
℃
EAS
544
Operating Junction and Storage Temperature Range
-55 To 175
TJ,TSTG
Wuxi NCE Power Co., Ltd
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