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NCE40P05S
NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE40P05S uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
● VDS =-40V,ID =-5.3A
RDS(ON) <80mΩ @ VGS=-10V
Schematic diagram
RDS(ON) <120mΩ @ VGS=-4.5V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
Marking and pin assignment
Application
●
●
●
Power switching application
Hard switched and high frequency circuits
DC-DC converter
SOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
12mm
Quantity
2500 units
40P05
NCE40P05S
SOP-8
Ø330mm
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
-40
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
V
V
VDS
±20
VGS
-5.3
-3.65
A
ID
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
ID (100℃)
IDM
A
-20
A
Maximum Power Dissipation
2.0
W
℃
PD
Operating Junction and Storage Temperature Range
-55 To 150
TJ,TSTG
Thermal Characteristic
Thermal Resistance ,Junction-to-Ambient(Note 2)
RθJA
62.5
℃/W
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
Max
Unit
Wuxi NCE Power Semiconductor Co., Ltd
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