Datasheet > NCE4009S

NCE4009S

更新时间： 2024-11-19 15:18:47

品牌	Logo	应用领域
新洁能 - NCEPOWER		开关
页数	文件大小	规格书
7页	619K
描述
新洁能提供的N型12V~200V和P型12V~150V沟槽型（Trench）功率MOSFET产品，采用先进的工艺制造技术、更优的工艺条件、精细优化的器件结构不断优化产品导通电阻、开关特性、可靠性等

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NCE4009S 数据手册

http://www.ncepower.com

NCE4009S

NCE N-Channel Enhancement Mode Power MOSFET

Description

The NCE4009S uses advanced trench technology to provide

excellent R_DS(ON)and low gate charge . The complementary

MOSFETs may be used to form a level shifted high side

switch, and for a host of other applications.

Schematic diagram

General Features

● N-Channel

V_DS=40V,I_D=9A

R_DS(ON)< 16mΩ @ V_GS=10V

R_DS(ON)< 24mΩ @ V_GS=4.5V

● High power and current handing capability

● Lead free product is acquired

● Surface mount package

Marking and pin assignment

SOP-8 top view

Tape width

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Quantity

2500 units

NCE4009S

SOP-8

Ø330mm

12mm

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter

Symbol

VDS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

±20

VGS

I_D

I_D(100℃)

I_DM

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

6.4

Maximum Power Dissipation

℃

P_D

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient ^{(Note 2)}

R_θJA

62.5

℃/W

Wuxi NCE Power Semiconductor Co., Ltd

Page 1

v2.0

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