Datasheet > NCE4003

NCE4003

更新时间： 2024-11-22 15:18:59

品牌	Logo	应用领域
新洁能 - NCEPOWER		开关
页数	文件大小	规格书
7页	681K
描述
新洁能提供的N型12V~200V和P型12V~150V沟槽型（Trench）功率MOSFET产品，采用先进的工艺制造技术、更优的工艺条件、精细优化的器件结构不断优化产品导通电阻、开关特性、可靠性等

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NCE4003 数据手册

http://www.ncepower.com

NCE4003

NCE N-Channel Enhancement Mode Power MOSFET

Description

The NCE4003 uses advanced trench technology to provide

excellent R_DS(ON), low gate charge. This device is suitable for

use as a Battery protection or in other switching application.

General Features

● V_DS=40V,I_D=3A

Schematic Diagram

R_DS(ON)= 33mΩ @ V_GS=10V(Typ)

R_DS(ON)= 52mΩ @ V_GS=4.5V(Typ)

● High power and current handing capability

● Lead free product is acquired

Marking and Pin Assignment

● Surface mount package

Application

●Battery switch

●DC/DC converter

SOT-23 Top View

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

3000 units

4003

NCE4003

SOT-23

Ø180mm

8 mm

Absolute Maximum Ratings (T_A=25℃unless otherwise noted)

Parameter Symbol

Limit

Unit

Drain-Source Voltage

VDS

VGS

I_D

Gate-Source Voltage

±20

Drain Current-Continuous

Drain Current-Pulsed ^{(Note 1)}

I_DM

Single pulse avalanche energy ^{(Note 5)}

Maximum Power Dissipation

E_AS

℃

P_D

0.7

Operating Junction and Storage Temperature Range

T_J,T_STG

-55 To 150

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient ^{(Note 2)}

R_θJA

179

℃/W

Wuxi NCE Power Co., Ltd

Page1

V1.0

12 3 4 5 6 7

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