Datasheet > NCE3416*

NCE3416*

更新时间： 2024-04-09 19:00:19

品牌	Logo	应用领域
新洁能 - NCEPOWER		开关
页数	文件大小	规格书
7页	618K
描述
新洁能提供的N型12V~200V和P型12V~150V沟槽型（Trench）功率MOSFET产品，采用先进的工艺制造技术、更优的工艺条件、精细优化的器件结构不断优化产品导通电阻、开关特性、可靠性等

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NCE3416* 数据手册

http://www.ncepower.com

NCE3416

NCE N-Channel Enhancement Mode Power MOSFET

Description

The NCE3416 uses advanced trench technology to provide

excellent R_DS(ON), low gate charge and operation with gate

voltages as low as 1.8V. This device is suitable for use as a

load switch or in PWM applications .It is ESD protested.

General Features

● V_DS= 20V,I_D=6.5A

Schematic diagram

R_DS(ON)<40mΩ @ V_GS=1.8V

R_DS(ON)<30mΩ @ V_GS=2.5V

R_DS(ON)<24mΩ @ V_GS=4.5V

ESD Rating: 2000V HBM

● High Power and current handing capability

● Lead free product is acquired

● Surface mount package

Marking and pin assignment

Application

● PWM application

● Load switch

SOT-23 top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

8mm

Quantity

3000 units

NCE3416

SOT-23

Ø180mm

Absolute Maximum Ratings (T_A=25℃unless otherwise noted)

Parameter

Symbol

VDS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

±12

VGS

Drain Current-Continuous

Drain Current-Pulsed ^{(Note 1)}

6.5

I_D

I_DM

Maximum Power Dissipation

1.4

℃

P_D

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient ^{(Note 2)}

R_θJA

℃/W

Electrical Characteristics (T_A=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

BV_DSS

V_GS=0V I_D=250μA

Wuxi NCE Power Co., Ltd

Page 1

v2.0

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