http://www.ncepower.com
NCE3404Y
NCE N-Channel Enhancement Mode Power MOSFET
D
Description
The NCE3404Y uses advanced trench technology to provide
excellent RDS(ON) and low gate charge.This device is suitable
for use as a load switch and PWM applications.
G
S
Genera Features
● VDS = 30V,ID = 5.8A
RDS(ON) < 28mΩ @ VGS=10V
Schematic diagram
RDS(ON) < 40mΩ @ VGS=4.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface mount package
Marking and pin assignment
Application
●Load switch
●PWM application
SOT-23-3L top view
Tape width
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Quantity
3000 units
3404Y
NCE3404Y
SOT-23-3L
Ø180mm
8 mm
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
30
Unit
Drain-Source Voltage
V
V
VDS
Gate-Source Voltage
±20
VGS
Drain Current-Continuous
Drain Current-Pulsed (Note 1)
5.8
A
ID
20
A
IDM
Maximum Power Dissipation
1.4
W
℃
PD
Operating Junction and Storage Temperature Range
-55 To 150
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
89
℃/W
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS
IDSS
VGS=0V ID=250μA
30
-
33
-
-
V
VDS=30V,VGS=0V
1
μA
Wuxi NCE Power Co., Ltd
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V2.0