http://www.ncepower.com
NCE3401AY
NCE P-Channel Enhancement Mode Power MOSFET
Description
D
The NCE3401AY uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
load switch or in PWM applications.
G
S
Schematic diagram
General Features
● VDS = -30V,ID = -4.4A
RDS(ON) < 120mΩ @ VGS=-2.5V
R
DS(ON) < 65mΩ @ VGS=-4.5V
DS(ON) < 52mΩ @ VGS=-10V
R
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
Marking and pin Assignment
Application
● PWM applications
● Load switch
● Power management
SOT-23-3L top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
3000 units
3401AY
NCE3401AY
SOT-23-3L
Ø180mm
8 mm
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter Symbol
Limit
-30
Unit
Drain-Source Voltage
V
V
VDS
VGS
ID
Gate-Source Voltage
±12
-4.4
-30
Drain Current-Continuous
Drain Current-Pulsed (Note 1)
A
A
IDM
Maximum Power Dissipation
1.3
W
℃
PD
Operating Junction and Storage Temperature Range
-55 To 150
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
95
℃/W
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
-30
-33
-
V
Wuxi NCE Power Co., Ltd
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