Pb Free Product
http://www.ncepower.com
NCE3401A
NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE3401A uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
load switch or in PWM applications.
D
G
S
General Features
● VDS = -30V,ID = -4.4A
RDS(ON) < 85mΩ @ VGS=-2.5V
Schematic diagram
R
DS(ON) < 65mΩ @ VGS=-4.5V
DS(ON) < 52mΩ @ VGS=-10V
R
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
Marking and pin Assignment
Application
●PWM applications
●Load switch
SOT-23 top view
●Power management
Package Marking And Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
3000 units
3401A Ẋ
NCE3401A
SOT-23
Ø180mm
8 mm
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter Symbol
Limit
-30
Unit
Drain-Source Voltage
V
V
VDS
VGS
ID
Gate-Source Voltage
±12
-4.4
-30
Drain Current-Continuous
Drain Current-Pulsed (Note 1)
A
A
IDM
Maximum Power Dissipation
1.3
W
℃
PD
Operating Junction and Storage Temperature Range
-55 To 150
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
95
℃/W
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
-30
-33
-
V
Wuxi NCE Power Co., Ltd
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