Datasheet > NCE3400XY

NCE3400XY

更新时间： 2024-03-03 10:11:09

品牌	Logo	应用领域
新洁能 - NCEPOWER		开关
页数	文件大小	规格书
7页	278K
描述
新洁能提供的N型12V~200V和P型12V~150V沟槽型（Trench）功率MOSFET产品，采用先进的工艺制造技术、更优的工艺条件、精细优化的器件结构不断优化产品导通电阻、开关特性、可靠性等

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NCE3400XY 数据手册

NCE3400XY

http://www.ncepower.com

NCE N-Channel Enhancement Mode Power MOSFET

Description

The NCE3400XY uses advanced trench technology to provide

excellent R_DS(ON), low gate charge and operation with gate

voltages as low as 2.5V. This device is suitable for use as a

Battery protection or in other Switching application.

Schematic diagram

General Features

● V_DS= 30V,I_D= 5.1A

R_DS(ON)< 55mΩ @ V_GS=2.5V

_DS(ON)< 39mΩ @ V_GS=4.5V

_DS(ON)< 33mΩ @ V_GS=10V

● High power and current handing capability

● Lead free product is acquired

● Surface mount package

Marking and pin assignment

● PWM applications

● Load switch

● Power management

SOT23-3L top view

Tape width

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Quantity

3000 units

3400XY

NCE3400XY

SOT23-3L

Ø180mm

8 mm

Absolute Maximum Ratings (T_A=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

V^DS

Gate-Source Voltage

±12

V^GS

Drain Current-Continuous

Drain Current-Pulsed ^{(Note 1)}

5.1

I_D

I_DM

Maximum Power Dissipation

1.3

℃

P_D

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient ^{(Note 2)}

R_θJA

℃/W

Electrical Characteristics (T_A=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

BV_DSS

I_DSS

V_GS=0V I_D=250μA

V_DS=30V,V_GS=0V

μA

Wuxi NCE Power Co., Ltd

Page1

v1.0

12 3 4 5 6 7

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NCE3401Y	NCEPOWER	新洁能提供的N型12V~200V和P型12V~150V沟槽型（Trench）功率MOSFE	获取价格