http://www.ncepower.com
NCE30P30K
NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE30P30K uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge .This
device is well suited for high current load applications.
General Features
● VDS =-30V,ID =-30A
RDS(ON) <18mΩ @ VGS=-10V
Schematic diagram
RDS(ON) <30mΩ @ VGS=-4.5V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
Application
● High side switch for full bridge converter
● DC/DC converter for LCD display
Marking and pin assignment
100% UIS TESTED!
100% ∆Vds TESTED!
TO-252-2L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
NCE30P30K
NCE30P30K
TO-252-2L
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Limit
-30
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
V
V
VDS
±20
VGS
-30
-21.2
-120
A
ID
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
ID (100℃)
IDM
A
A
Maximum Power Dissipation
60
W
PD
Derating factor
Single pulse avalanche energy (Note 5)
0.4
W/℃
mJ
℃
EAS
169
Operating Junction and Storage Temperature Range
-55 To 175
TJ,TSTG
Wuxi NCE Power Co., Ltd
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