http://www.ncepower.com
NCE30P25S
NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE30P25S uses advanced trench technology to provide
excellent RDS(ON), This device is suitable for use as a load
switch or power management.
Schematic diagram
General Features
● VDS = -30V,ID = -25A
RDS(ON) <9mΩ @ VGS=-10V
RDS(ON) <14mΩ @ VGS=-4.5V
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
Marking and pin assignment
Application
● Power management
● Load switch
SOP-8 top view
Tape width
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Quantity
4000 units
NCE30P25S
NCE30P25S
SOP-8
Ø330mm
12mm
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
VDS
Limit
-30
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
V
V
±20
VGS
-25
A
ID
Drain Current-Pulsed (Note 1)
-100
A
IDM
Maximum Power Dissipation
3.5
W
℃
PD
Operating Junction and Storage Temperature Range
-55 To 150
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
36
℃/W
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
-30
-
V
Wuxi NCE Power Co., Ltd
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v5.0