Datasheet > NCE30ND35Q

NCE30ND35Q

更新时间： 2024-03-03 10:09:21

品牌	Logo	应用领域
新洁能 - NCEPOWER		双极性晶体管
页数	文件大小	规格书
7页	651K
描述
新洁能提供质量可靠、品种齐全、性能卓越的车规级功率器件，包含N型MOSFET，P型MOSFET，双通道MOSFET，IGBT，上述车规级功率器件均已通过AEC-Q101认证。其中，车规级功率MOS

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NCE30ND35Q 数据手册

http://www.ncepower.com

NCE30ND35Q

NCE N-Channel Enhancement Mode Power MOSFET

Description

The NCE30ND35Q uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

General Features

● V_DS=30V,I_D=35A

Schematic Diagram

R_DS(ON)<13mΩ @ V_GS=10V

R_DS(ON)<23mΩ @ V_GS=4.5V

● High density cell design for ultra low Rdson

● Fully characterized Avalanche voltage and current

● Good stability and uniformity with high E_AS

● Excellent package for good heat dissipation

● Special process technology for high ESD capability

pin assignment

Application

●

Power switching application

Hard Switched and High Frequency Circuits

Uninterruptible Power Supply

Top View

Bottom View

100% UIS TESTED!

100% ΔVds TESTED!

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

NCE30ND35Q

PDFN3.3X3.3-8L

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

VGS

Gate-Source Voltage

±20

Drain Current-Continuous

24.8

I_D

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

I_D(100℃)

I_DM

140

Maximum Power Dissipation

Derating factor

P_D

0.24

W/℃

℃

Single pulse avalanche energy ^{(Note 5)}

Operating Junction and Storage Temperature Range

E_AS

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Case^{(Note 2)}

R_θJC

4.17

℃/W

Wuxi NCE Power Co., Ltd

Page 1

v4.0

12 3 4 5 6 7

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