Datasheet > NCE30ND09S

NCE30ND09S

更新时间： 2024-03-03 10:10:20

品牌	Logo	应用领域
新洁能 - NCEPOWER		/
页数	文件大小	规格书
7页	347K
描述
????新洁能提供的P型20V~60V和N型18V~100V的Dual（双芯）MOSFET产品，通过将两颗P型或者N型的功率MOSFET产品以并联合封的方式集成到单个封装中，极大程度上优化了产品结

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NCE30ND09S 数据手册

http://www.ncepower.com

NCE30ND09S

NCE N-Channel Enhancement Mode Power MOSFET

Description

The NCE30ND09S uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

Schematic diagram

General Features

● V_DS=30V,I_D=9A

R_DS(ON)< 12mΩ @ V_GS=10V

R_DS(ON)< 17mΩ @ V_GS=4.5V

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

Application

● Power switching application

● Hard switched and high frequency circuits

● Uninterruptible power supply

Marking and pin Assignment

SOP-8 top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

4000 units

30ND09S

NCE30ND09S

SOP-8

Ø330mm

12mm

Absolute Maximum Ratings (T_A=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^DS

±20

V^GS

6.4

I_D

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

I_D(100℃)

I_DM

Maximum Power Dissipation

℃

P_D

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

Parameter

Thermal Resistance,Junction-to-Ambient ^{(Note 2)}

Symbol

Typ

Max

Unit

R_θJA

62.5

℃/W

Wuxi NCE Power Co., Ltd

Page 1

v2.0

12 3 4 5 6 7

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