Datasheet > NCE30H29D

NCE30H29D

更新时间： 2024-11-22 15:19:23

品牌	Logo	应用领域
新洁能 - NCEPOWER		开关
页数	文件大小	规格书
7页	416K
描述
新洁能提供的N型12V~200V和P型12V~150V沟槽型（Trench）功率MOSFET产品，采用先进的工艺制造技术、更优的工艺条件、精细优化的器件结构不断优化产品导通电阻、开关特性、可靠性等

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NCE30H29D 数据手册

Pb Free Product

http://www.ncepower.com

NCE30H29D

NCE N-Channel Enhancement Mode Power MOSFET

Description

The NCE30H29D uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

General Features

● V_DS=30V ,I_D=290A

Schematic diagram

R_DS(ON)< 1.8mΩ @ V_GS=10V

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high E_AS

● Excellent package for good heat dissipation

● Special process technology for high ESD capability

Marking and pin assignment

Application

● Power switching application

● Hard switched and high frequency circuits

● Uninterruptible power supply

100% UIS TESTED!

100% ∆Vds TESTED!

TO-263-2L top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

NCE30H29D

TO-263-2L

Absolute Maximum Ratings (T_A=25℃unless otherwise noted)

Parameter

Symbol

V^DS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

±20

V^GS

Drain Current-Continuous (Silicon Limited)

Drain Current-Continuous(T_C=100℃) (Silicon Limited)

Pulsed Drain Current

290

205

I_D

I_D(100℃)

I_DM

1160

Maximum Power Dissipation

270

P_D

Derating factor

Single pulse avalanche energy ^{(Note 5)}

1.8

W/℃

℃

E_AS

1600

-55 To 175

Operating Junction and Storage Temperature Range

T_J,T_STG

Wuxi NCE Power Co., Ltd

Page1

v1.0

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